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| AT28C010 Mil Features * * * * * * * * * * Fast Read Access Time - 120 ns Automatic Page Write Operation Internal Address and Data Latches for 128-Bytes Internal Control Timer Fast Write Cycle Time Page Write Cycle Time - 10 ms Maximum 1 to 128-Byte Page Write Operation Low Power Dissipation 80 mA Active Current 300 A CMOS Standby Current Hardware and Software Data Protection DATA Polling for End of Write Detection High Reliability CMOS Technology Endurance: 104 or 105 Cycles Data Retention: 10 Years Single 5V 10% Supply CMOS and TTL Compatible Inputs and Outputs JEDEC Approved Byte-Wide Pinout 1 Megabit (128K x 8) Paged CMOS E2PROM Military Description The AT28C010 is a high-performance Electrically Erasable and Programmable Read Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device offers (continued) Pin Configurations Pin Name A0 - A16 CE OE WE I/O0 - I/O7 NC Function Addresses Chip Enable Output Enable Write Enable Data Inputs/Outputs No Connect 44 LCC Top View AT28C010 Mil PGA Top View CERDIP, FLATPACK Top View 32 LCC Top View 0353C 2-243 Description (Continued) access times to 120 ns with power dissipation of just 440 mW. When the device is deselected, the CMOS standby current is less than 300 A. The AT28C010 is accessed like a Static RAM for the read or write cycle without the need for external components. The device contains a 128-byte page register to allow writing of up to 128-bytes simultaneously. During a write cycle, the address and 1 to 128-bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a write cycle, the device will automatically write the latched data using an internal control timer. The end of a write cycle can be detected by DATA POLLING of I/O7. Once the end of a write cycle has been detected a new access for a read or write can begin. Atmel's 28C010 has additional features to ensure high quality and manufacturability. The device utilizes internal error correction for extended endurance and improved data retention characteristics. An optional software data protection mechanism is available to guard against inadvertent writes. The device also includes an extra 128bytes of E2PROM for device identification or tracking. Block Diagram Absolute Maximum Ratings* Temperature Under Bias................. -55C to +125C Storage Temperature...................... -65C to +150C All Input Voltages (including NC Pins) with Respect to Ground ................... -0.6V to +6.25V All Output Voltages with Respect to Ground .............-0.6V to VCC + 0.6V Voltage on OE and A9 with Respect to Ground ................... -0.6V to +13.5V *NOTICE: Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2-244 AT28C010 Mil AT28C010 Mil Device Operation READ: The AT28C010 is accessed like a Static RAM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in the high impedance state when either CE or OE is high. This dualline control gives designers flexibility in preventing bus contention in their system. BYTE WRITE: A low pulse on the WE or CE input with CE or WE low (respectively) and OE high initiates a write cycle. The address is latched on the falling edge of CE or WE, whichever occurs last. The data is latched by the first rising edge of CE or WE. Once a byte write has been started it will automatically time itself to completion. Once a programming operation has been initiated and for the duration of tWC, a read operation will effectively be a polling operation. PAGE WRITE: The page write operation of the AT28C010 allows 1 to 128-bytes of data to be written into the device during a single internal programming period. A page write operation is initiated in the same manner as a byte write; the first byte written can then be followed by 1 to 127 additional bytes. Each successive byte must be written within 150 s (tBLC) of the previous byte. If the tBLC limit is exceeded the AT28C010 will cease accepting data and commence the internal programming operation. All bytes during a page write operation must reside on the same page as defined by the state of the A7 - A16 inputs. For each WE high to low transition during the page write operation, A7 - A16 must be the same. The A0 to A6 inputs are used to specify which bytes within the page are to be written. The bytes may be loaded in any order and may be altered within the same load period. Only bytes which are specified for writing will be written; unnecessary cycling of other bytes within the page does not occur. DATA POLLING: The AT28C010 features DATA Polling to indicate the end of a write cycle. During a byte or page write cycle an attempted read of the last byte written will result in the complement of the written data to be presented on I/O7. Once the write cycle has been completed, true data is valid on all outputs, and the next write cycle may begin. DATA Polling may begin at anytime during the write cycle. TOGGLE BIT: In addition to DATA Polling the AT28C010 provides another method for determining the end of a write cycle. During the write operation, successive attempts to read data from the device will result in I/O6 toggling between one and zero. Once the write has completed, I/O6 will stop toggling and valid data will be read. Reading the toggle bit may begin at any time during the write cycle. DATA PROTECTION: If precautions are not taken, inadvertent writes may occur during transitions of the host system power supply. Atmel has incorporated both hardware and software features that will protect the memory against inadvertent writes. HARDWARE PROTECTION: Hardware features protect against inadvertent writes to the AT28C010 in the following ways: (a) VCC sense - if VCC is below 3.8V (typical) the write function is inhibited; (b) VCC power-on delay - once VCC has reached 3.8V the device will automatically time out 5 ms (typical) before allowing a write: (c) write inhibit holding any one of OE low, CE high or WE high inhibits write cycles; (d) noise filter - pulses of less than 15 ns (typical) on the WE or CE inputs will not initiate a write cycle. SOFTWARE DATA PROTECTION: A software controlled data protection feature has been implemented on the AT28C010. When enabled, the software data protection (SDP), will prevent inadvertent writes. The SDP feature may be enabled or disabled by the user; the AT28C010 is shipped from Atmel with SDP disabled. SDP is enabled by the host system issuing a series of three write commands; three specific bytes of data are written to three specific addresses (refer to Software Data Protection Algorithm). After writing the 3-byte command sequence and after tWC the entire AT28C010 will be protected against inadvertent write operations. It should be noted, that once protected the host may still perform a byte or page write to the AT28C010. This is done by preceding the data to be written by the same 3-byte command sequence used to enable SDP. Once set, SDP will remain active unless the disable command sequence is issued. Power transitions do not disable SDP and SDP will protect the AT28C010 during power-up and power-down conditions. All command sequences must conform to the page write timing specifications. The data in the enable and disable command sequences is not written to the device and the memory addresses used in the sequence may be written with data in either a byte or page write operation. After setting SDP, any attempt to write to the device without the 3-byte command sequence will start the internal write timers. No data will be written to the device; however, for the duration of tWC, read operations will effectively be polling operations. (continued) 2-245 Device Operation (Continued) DEVICE IDENTIFICATION: A n e x t r a 1 2 8 - b y t e s o f E2PROM memory are available to the user for device identification. By raising A9 to 12V 0.5V and using address locations 1FF80H to 1FFFFH the bytes may be written to or read from in the same manner as the regular memory array. OPTIONAL CHIP ERASE MODE: The entire device can be erased using a 6-byte software code. Please see Software Chip Erase application note for details. DC and AC Operating Range AT28C010-12 Operating Temperature (Case) VCC Power Supply Mil. -55C - 125C 5V 10% AT28C010-15 -55C - 125C 5V 10% AT28C010-20 -55C - 125C 5V 10% AT28C010-25 -55C - 125C 5V 10% Operating Modes Mode Read Write (2) CE VIL VIL VIH X X X OE VIL VIH X (1) WE VIH VIL X VIH X X I/O DOUT DIN High Z Standby/Write Inhibit Write Inhibit Write Inhibit Output Disable X VIL VIH High Z Notes: 1. X can be VIL or VIH. 2. Refer to AC Programming Waveforms. DC Characteristics Symbol ILI ILO ISB1 ISB2 ICC VIL VIH VOL VOH1 VOH2 Parameter Input Load Current Output Leakage Current VCC Standby Current CMOS VCC Standby Current TTL VCC Active Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage Output High Voltage CMOS IOL = 2.1 mA IOH = -400 A IOH = -100 A; VCC = 4.5V 2.4 4.2 2.0 .45 Condition VIN = 0V to VCC + 1V VI/O = 0V to VCC CE = VCC - 0.3V to VCC + 1V CE = 2.0V to VCC + 1V f = 5 MHz; IOUT = 0 mA Min Max 10 10 300 3 80 0.8 Units A A A mA mA V V V V V 2-246 AT28C010 Mil AT28C010 Mil AC Read Characteristics AT28C010-12 Symbol tACC tCE tOE (1) (2) AT28C010-15 Min Max AT28C010-20 Min Max AT28C010-25 Min Max Parameter Address to Output Delay CE to Output Delay OE to Output Delay CE or OE to Output Float Output Hold from OE, CE or Address, whichever occurred first Min Max Units ns ns ns ns ns 120 120 0 0 0 50 50 0 0 0 150 150 55 55 0 0 0 200 200 55 55 0 0 0 250 250 55 55 tDF (3, 4) tOH AC Read Waveforms (1, 2, 3, 4) Notes: 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC. 2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change without impact on tACC . 3. tDF is specified from OE or CE whichever occurs first (CL = 5 pF). 4. This parameter is characterized and is not 100% tested. Input Test Waveforms and Measurement Level Output Test Load tR, tF < 5 ns Pin Capacitance (f = 1 MHz, T = 25C) (1) Typ CIN COUT Note: Max 10 12 Units pF pF Conditions VIN = 0V VOUT = 0V 4 8 1. This parameter is characterized and is not 100% tested. 2-247 AC Write Characteristics Symbol tAS, tOES tAH tCS tCH tWP tDS tDH, tOEH Parameter Address, OE Set-up Time Address Hold Time Chip Select Set-up Time Chip Select Hold Time Write Pulse Width (WE or CE) Data Set-up Time Data, OE Hold Time Min 0 50 0 0 100 50 0 Max Units ns ns ns ns ns ns ns AC Write Waveforms WE Controlled CE Controlled 2-248 AT28C010 Mil AT28C010 Mil Page Mode Characteristics Symbol tWC tAS tAH tDS tDH tWP tBLC tWPH Parameter Write Cycle Time Address Set-up Time Address Hold Time Data Set-up Time Data Hold Time Write Pulse Width Byte Load Cycle Time Write Pulse Width High 50 0 50 50 0 100 150 Min Max 10 Units ms ns ns ns ns ns s ns Page Mode Write Waveforms (1, 2) Notes: 1. A7 through A16 must specify the page address during each high to low transition of WE (or CE). 2. OE must be high only when WE and CE are both low. Chip Erase Waveforms tS = 5 sec (min.) tW = tH = 10 msec (min.) VH = 12.0V 0.5V 2-249 Software Data Protection Enable Algorithm (1) LOAD DATA AA TO ADDRESS 5555 LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA A0 TO ADDRESS 5555 LOAD DATA XX TO ANY ADDRESS (4) LOAD LAST BYTE TO LAST ADDRESS Software Data Protection Disable Algorithm (1) LOAD DATA AA TO ADDRESS 5555 LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA 80 TO ADDRESS 5555 LOAD DATA AA TO ADDRESS 5555 LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA 20 TO ADDRESS 5555 LOAD DATA XX TO ANY ADDRESS (4) LOAD LAST BYTE TO LAST ADDRESS WRITES ENABLED (2) ENTER DATA PROTECT STATE Notes: 1. Data Format: I/O7 - I/O0 (Hex); Address Format: A14 - A0 (Hex). 2. Write Protect state will be activated at end of write even if no other data is loaded. 3. Write Protect state will be deactivated at end of write period even if no other data is loaded. 4. 1 to 128-bytes of data are loaded. EXIT DATA PROTECT STATE (3) Software Protected Program Cycle Waveform (1, 2, 3) Notes: 1. A0 - A14 must conform to the addressing sequence for the first 3-bytes as shown above. 2. After the command sequence has been issued and a page write operation follows, the page address inputs (A7 - A16) must be the same for each high to low transition of WE (or CE). 3. OE must be high only when WE and CE are both low. 2-250 AT28C010 Mil AT28C010 Mil Data Polling Characteristics (1) Symbol tDH tOEH tOE tWR Parameter Data Hold Time OE Hold Time OE to Output Delay (2) Min 10 10 0 Typ Max Units ns ns ns ns Write Recovery Time Notes: 1. These parameters are characterized and not 100% tested. 2. See AC Read Characteristics. Data Polling Waveforms Toggle Bit Characteristics (1) Symbol tDH tOEH tOE tOEHP tWR Parameter Data Hold Time OE Hold Time OE to Output Delay OE High Pulse Write Recovery Time (2) Min 10 10 150 0 Typ Max Units ns ns ns ns ns Notes: 1. These parameters are characterized and not 100% tested. 2. See AC Read Characteristics. Toggle Bit Waveforms (1, 2, 3) Notes: 1. Toggling either OE or CE or both OE and CE will operate toggle bit. 2. Beginning and ending state of I/O6 will vary. 3. Any address location may be used but the address should not vary. 2-251 Ordering Information (1) tACC (ns) 120 ICC (mA) Active 80 Standby 0.3 AT28C010(E)-12DM/883 AT28C010(E)-12EM/883 AT28C010-12FM/883 AT28C010(E)-12LM/883 AT28C010(E)-12UM/883 AT28C010(E)-15DM/883 AT28C010(E)-15EM/883 AT28C010-15FM/883 AT28C010(E)-15LM/883 AT28C010(E)-15UM/883 AT28C010(E)-20DM/883 AT28C010(E)-20EM/883 AT28C010-20FM/883 AT28C010(E)-20LM/883 AT28C010(E)-20UM/883 AT28C010(E)-25DM/883 AT28C010(E)-25EM/883 AT28C010-25FM/883 AT28C010(E)-25LM/883 AT28C010(E)-25UM/883 5962-38267 07 MXX 5962-38267 07 MZX 5962-38267 07 MYX 5962-38267 07 MTX 5962-38267 05 MXX 5962-38267 05 MUX 5962-38267 05 MZX 5962-38267 05 MYX 5962-38267 05 MTX 5962-38267 03 MXX 5962-38267 03 MUX 5962-38267 03 MZX 5962-38267 03 MYX 5962-38267 03 MTX 5962-38267 01 MXX 5962-38267 01 MUX 5962-38267 01 MZX 5962-38267 01 MYX 5962-38267 01 MTX AT28C010-W Ordering Code Package 32D6 32L 32F 44L 30U 32D6 32L 32F 44L 30U 32D6 32L 32F 44L 30U 32D6 32L 32F 44L 30U 32D6 32F 44L 30U 32D6 32L 32F 44L 30U 32D6 32L 32F 44L 30U 32D6 32L 32F 44L 30U DIE Operation Range Military/883C Class B, Fully Compliant (-55C to 125C) 150 80 0.3 Military/883C Class B, Fully Compliant (-55C to 125C) 200 80 0.3 Military/883C Class B, Fully Compliant (-55C to 125C) 250 80 0.3 Military/883C Class B, Fully Compliant (-55C to 125C) 120 80 0.3 Military/883C Class B, Fully Compliant (-55C to 125C) Military/883C Class B, Fully Compliant (-55C to 125C) 150 80 0.3 200 80 0.3 Military/883C Class B, Fully Compliant (-55C to 125C) 250 80 0.3 Military/883C Class B, Fully Compliant (-55C to 125C) 80 0.3 Note: 1. See Valid Part Number table on next page. 2-252 AT28C010 Mil AT28C010 Mil Valid Part Numbers The following table lists standard Atmel products that can be ordered. Device Numbers AT28C010 AT28C010E AT28C010 AT28C010E AT28C010 AT28C010E AT28C010 AT28C010E Speed 12 12 15 15 20 20 25 25 Package and Temperature Combinations DM/883, EM/883, FM/883, LM/883, UM/883 DM/883, EM/883, LM/883, UM/883 DM/883, EM/883, FM/883, LM/883, UM/883 DM/883, EM/883, LM/883, UM/883 DM/883, EM/883, FM/883, LM/883, UM/883 DM/883, EM/883, LM/883, UM/883 DM/883, EM/883, FM/883, LM/883, UM/883 DM/883, EM/883, LM/883, UM/883 Package Type 32D6 32F 32L 44L 30U W 32 Lead, 0.600" Wide, Non-Windowed, Ceramic Dual Inline (CERDIP) 32 Lead, Non-Windowed, Ceramic Bottom-Brazed Flat Package (Flatpack) 32 Pad, Non-Windowed, Ceramic Leadless Chip Carrier (LCC) 44 Pad, Non-Windowed, Ceramic Leadless Chip Carrier (LCC) 30 Pin, Ceramic Pin Grid Array (PGA) Die Options Blank E Standard Device: Endurance = 10K Write Cycles; Write Time = 10 ms High Endurance Option: Endurance = 100K Write Cycles 2-253 |
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